|
|
|
|
| LEADER |
00941cam#a2200241#a#4500 |
| 008 |
880923s1989####nyua#####b####001#0#eng## |
| 005 |
20060918083650.0 |
| 001 |
BCCAB011294 |
| 003 |
AR-BCCAB |
| 245 |
0 |
0 |
|a Ionizing radiation effects in MOS devices and circuits /
|c edited by T.P. Ma and Paul V. Dressendorfer.
|
| 260 |
# |
# |
|a New York :
|b Wiley,
|c c1989.
|
| 300 |
# |
# |
|a xviii, 587 p. :
|b il. ;
|c 25 cm.
|
| 504 |
# |
# |
|a Incluye referencias bibliográficas.
|
| 020 |
# |
# |
|a 047184893X
|
| 700 |
1 |
# |
|a Ma, T. P.
|
| 700 |
1 |
# |
|a Dressendorfer, Paul V.
|
| 650 |
# |
0 |
|a Metal oxide semiconductors
|x Effect of radiation on.
|
| 040 |
# |
# |
|a DLC
|c DLC
|d DLC
|b spa
|d arbccab
|
| 500 |
# |
# |
|a "A Wiley-Interscience publication."
|
| 856 |
4 |
2 |
|3 Reseña
|u http://www.loc.gov/catdir/description/wiley031/88029180.html4#
|3 Indice
|u http://www.loc.gov/catdir/tocs/onix01/88029180.html
|
| 082 |
0 |
0 |
|a 621.3815/2
|2 19
|
| 942 |
# |
# |
|c BK
|
| 952 |
# |
# |
|2 udc
|a ARBCCAB
|b ARBCCAB
|i 16800
|o 539.12 M11
|p 16800
|t 1
|y BK
|
