Efectos de las condiciones de fabricación sobre las características corriente-voltaje en la uniones Schottky W/n Gaas fabricado sputterin RF /

Efectos de las condiciones de fabricación sobre las características corriente-voltaje en la uniones Schottky W/n Gaas fabricado sputterin RF /

Guardado en:

Detalles Bibliográficos
Autor principal:	Singh, Amar.
Otros Autores:	Velásquez. Luis.
Formato:	Artículo
Lenguaje:	Español
Publicado:	Maracaibo : Universidad del Zulia, 2002.
Materias:	Semiconductors > Thermal properties. Diodes. Semiconductor. Artículos electrónicos.
Acceso en línea:	https://elibro.net/ereader/siduncu/16456
Publicación relacionada:	Contenido en: Ciencia

Ejemplares similares

Fundamentos de la electrónica y los semiconductores /
por: Leñero Bardallo, Juan Antonio,
Publicado: (2018)

Parametric and tunnel diodes /
por: Chang, Kern Ko Nan, 1918-
Publicado: ([1964])

Estudio de la magnetoresistencia en el compuesto ternario Cu2GeSe3 /
por: Villarreal, Manuel.
Publicado: (2006)

Radiation effects on semiconductor materials, detectors and devices : proceedings of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices : held at I.T. "G. Salvemini", Firenze, Italy, March 6-8, 1996 /
por: International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (1996 : Florence, Italy)
Publicado: (c1997.)

Semiconductor-diode parametric amplifiers /
por: Blackwell, Lawrence A.
Publicado: (1961.)

Estudio estructural a altas presiones del MnGa2Se4 /
Publicado: (2006)

Tecnología y diseño de pantallas electrónicas gigantes : la revolución led /
por: Gago Calderón, Alfonso.
Publicado: (2016)

Development and application of semiconductor tracking detectors : proceedings of the Second International Symposium on Development and Application of Semiconductor Tracking Detectors (Hiroshima STD Symposium) : Hiroshima, Japan, October 10-13, 1995 /
por: International Symposium on Development and Application of Semiconductor Tracking Detectors (2nd : 1995 : Hiroshima, Japan)
Publicado: (1996.)

El Triac electrónica, ciencia y tecnología /
por: Lima P., Gustavo Ernesto.
Publicado: (2009)

Physical electronics and circuit models of transistors /
por: Gray, Paul E.
Publicado: (1964.)

Variable impedance devices /
Publicado: (c1978.)

Druckabhängigkeit der elektronischen Bandstruktur und der optischen Egenschaften von Ge, GaAs und GaxIn1-xP /
por: Goñi, Alejandro R.
Publicado: (1989.)

Semiconductor devices : basic principles /
por: Singh, Jasprit.
Publicado: (2000, c2001.)

Solid state devices, 1974 : seven invited papers presented at the fourth European Solid State Physics Device Research Conference (ESSDERC) held at the University of Nottingham, 16-19 September 1974.
por: European Solid State Devices Research Conference (4th : 1974 : University of Nottingham)
Publicado: (c1975.)

Analytical techniques for the characterization of compound semiconductors : proceedings of Symposium D on Analytical Techniques for the Characterization of Compound Semiconductors of the 1990 E-MRS Fall Conference, Strasbourg, France, November 27-30, 1990 /
por: Symposium D on Analytical Techniques for the Characterization of Compound Semiconductors (1990 : Strasbourg, France)
Publicado: (1991.)

Semiconductors /
por: Smith, R. A. 1909-
Publicado: (1959.)

Radiation effects in semiconductors /
por: International Conference on Radiation Effects in Semiconductors, 1970. State University of New York at Albany,
Publicado: (c1971.)

Semiconductor device measurements /
por: Mulvey, John.
Publicado: (1969.)

ICFSI-5 : proceedings of the fifth International Conference on the Formation of Semiconductor Interfaces, Princeton University, Princeton, NJ, June 26-30, 1995 /
por: International Conference on the Formation of Semiconductor Interfaces (5th : 1995 : Princeton, N.J.)
Publicado: (1996.)

ISCSI-2 : proceedings of the second international symposium on the control of semiconductor interfaces, Karuizawa, Japan, October 28 - November 1, 1996 /
por: International Symposium on the Control of Semiconductor Interfaces (2nd : 1996 : Karuizawa, Japan)
Publicado: (1997.)

Semiconductors /
Publicado: (1959.)

Solid-state electronics : a basic course for engineers and technicians /
por: Hibberd, R. G.
Publicado: (1968.)

Semiconductor electronics /
por: Gibbons, James F.
Publicado: (1966.)

Solid state electronic devices /
por: Streetman, Ben G.
Publicado: ([1972])

Fundamentals of semiconductors : physics and materials properties /
por: Yu, Peter Y., 1944-
Publicado: (c2001.)

Fundamentals of semiconductors : physics and materials properties /
por: Yu, Peter Y., 1944-
Publicado: (c1996.)

2009 International conference on solid state devices and materials (SSDM2009) : sendai Kokusai Hotel, Sendai, Miyagi, Japan, October 7-9, 2009 /
por: International Conference on Solid State Devices and Materials (2009 : October 7-9, 2009 : Sendai, Miyagi, Japan)
Publicado: (2010.)

Introduction to semiconductor physics /
por: Adler, Richard B.
Publicado: (c1964.)

Proceedings of the International Conference on Low-dimensional conductors, Boulder, Colorado, August 9-14, 1981 /
por: International Conference on Low-dimensional conductors (1981 August 9-14 : Boulder, Col.)
Publicado: (1982.)

Nanocompositos híbridos orgánico-inorgánicos con directores de estructura : obtención y estudio de sus propiedades /
por: López Cabaña, Zoraya Elena.
Publicado: (2009)

Efecto de la presión hidrostática sobre el frente de absorción fundamental del ZnTe en las fases esfalerita y cinnabar /
por: Pérez, Flor Virginia.
Publicado: (1998)

Physics of semiconductor devices /
por: Sze, S. M., 1936-
Publicado: (c2007.)

Handbook on semiconductors /
Publicado: (c1980-1982.)

The semiconductor data book.
Publicado: (1966.)

Semiconductor measurements and instrumentation /
por: Runyan, W. R.
Publicado: ([1975])

Physics of semiconductor devices /
por: Sze, S. M., 1936-
Publicado: ([1969])

Physique des dispositifs à semiconducteurs /
Publicado: (1970-)

Proceedings of the IUMRS International Conference on Advanced Materials, Symposium N: Compound Semiconductors, Beijing, China, 13-18 June, 1999 /
por: Symposium N, Compound Semiconductors (1999 : Beijing, China)
Publicado: (c2000.)

23rd International Conference on the Physics of Semiconductors : Berlin, Germany, July 21-26, 1996 /
por: International Conference on the Physics of Semiconductors (23rd : 1996 : Berlin, Germany)
Publicado: (c1996.)

Physik und Technik der Halbleiter /
por: Seiler, Karl, 1910-
Publicado: (1964.)