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01460ntm#a22003855a#4500 |
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TSRCCAB017210 |
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110331s2010####ag#d###f#bm####01##0spa|d |
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20120511114624.0 |
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AR-BCCAB |
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|a Aleaciones semiconductoras con GAP ajustable :
|b estructura electrónica de Ge_1-xSn_x /
|c José Daniel Querales Flores.
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| 260 |
# |
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|c 2010.
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| 300 |
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|a 116 p. ;
|c 30 cm.
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|a Tesis (maestría, Ciencias Físicas)--Universidad Nacional de Cuyo. Instituto Balseiro, 2010.
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| 504 |
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|a Bibliografía: p. 113-116
|b 41.
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|a Director de tesis: Cecilia I. Ventura.
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|a Co-director de tesis: Rafael Barrio.
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|a Incluye índice.
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|a CONSULTA RESTRINGIDA
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| 100 |
1 |
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|a Querales Flores, José D.
|4 dis
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| 700 |
1 |
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|a Ventura, Cecilia I.
|4 ths
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| 700 |
1 |
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|a Barrio, Rafael.
|4 ths
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| 710 |
2 |
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|a Universidad Nacional de Cuyo.
|b Instituto Balseiro
|4 dgg.
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| 650 |
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7 |
|a Alloys
|x Theses.
|2 inist
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| 650 |
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7 |
|a Electronic structure
|x Theses.
|2 inist
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| 650 |
# |
7 |
|a Aleaciones
|x Tesis.
|2 inist
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| 650 |
# |
7 |
|a Estructura electrónica
|x Tesis.
|2 inist
|
| 653 |
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|a GeSn
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| 653 |
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|a Direct GAP
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| 653 |
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|a GAP directo
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| 653 |
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|a Non-substitutional defects
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| 653 |
# |
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|a Defectos no-sustitucionales
|
| 040 |
# |
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|a arbccab
|b spa
|
| 856 |
4 |
1 |
|u http://campi.cab.cnea.gov.ar/tocs/21667.pdf
|3 Indice.
|
| 942 |
# |
# |
|c TS
|
| 952 |
# |
# |
|2 udc
|a ARBCCAB
|b ARBCCAB
|i 21667
|o T.M. [043]53 2010 Q35 Ej.CONSULTA RESTRINGIDA
|p 21667
|t 1
|y TS
|
