Transport, correlation, and structural defects /

Transport, correlation, and structural defects /

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Detalles Bibliográficos
Otros Autores:	Fritzsche, Hellmut.
Formato:	Libro
Lenguaje:
Publicado:	Singapore ; Teaneck, N.J. : World Scientific, c1990.
Colección:	Advances in disordered semiconductors ; v. 3
Materias:	Semiconductors > Defects. Order-disorder models.

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